Irhmb6s7260
WebQUOTAZIONI, DISPONIBILITÀ & LEAD TIME. Power MOSFET surface Mount in package SupIR-SMD. Nessun cracking quando saldato direttamente su PCB in polyimide. Nell’utilizzo dei Power MOSFET nel classico package ermetico, uno dei principali problemi per i progettisti di sistemi spaziali è il loro montaggio sui circuiti stampati (PCB): la ... IRHMB6S7260 Pre-Irradiation Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Parameter Up to 300 kRads(Si) 1 Units Test Conditions Min. Max. BVDSS Drain-to-Source Breakdown Voltage 200 ––– V VGS = 0V, ID = 1.0mA VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 1.0mA
Irhmb6s7260
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WebView and download the latest Infineon IRHMB6S7260 MOSFETs PDF Datasheet including technical specifications WebNASA Partners with Telesat Gov Solutions to Develop a Tracking and Data Relay Satellite System - May 11, 2024; Rohde & Schwarz - Rohde & Schwarz to Host its Second Virtual …
WebRad-Hard and Hermetic MOSFETs IR offers a broad selection of Rad-Hard and hermetic MOSFETs in a wide range of packaging options screened to MIL-PRF-19500 and available as QPLs. Explore Our Ground-breaking Technologies Hermetic MOSFETs WebJoin ArrowPerks and save $50 off $300+ order with code PERKS50
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WebInternational Rectifier - IRHMB6S7260 Rad hard, 200V, 35A, single, N-channel MOSFET, R6 in a TO-254AA Tabless Low Ohmic package. IR HiRel Product Families.
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